first commit for chrg

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wmano
2025-08-16 22:58:22 +08:00
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| 文件夹 | 说明 |
| :------ | :----------------------- |
| porting | 移植相关的示例代码及文档 |
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# Flash 设备及分区移植示例
本示例主要演示 Flash 设备及分区相关的移植。
## 1、Flash 设备
在定义 Flash 设备表前,需要先定义 Flash 设备,参考 [`fal_flash_sfud_port.c`](fal_flash_sfud_port.c) (基于 [SFUD](https://github.com/armink/SFUD) 万能 SPI Flash 驱动的 Flash 设备)与 [`fal_flash_stm32f2_port.c`](fal_flash_stm32f2_port.c) STM32F2 片内 Flash)这两个文件。这里简介下 `fal_flash_stm32f2_port.c` 里的代码实现。
### 1.1 定义 Flash 设备
针对 Flash 的不同操作,这里定义了如下几个操作函数:
- `static int init(void)`**可选** 的初始化操作
- `static int read(long offset, rt_uint8_t *buf, rt_size_t size)`:读取操作
|参数 |描述|
|:----- |:----|
|offset |读取数据的 Flash 偏移地址|
|buf |存放待读取数据的缓冲区|
|size |待读取数据的大小|
|return |返回实际读取的数据大小|
- `static int write(long offset, const rt_uint8_t *buf, rt_size_t size)` :写入操作
| 参数 | 描述 |
| :----- | :------------------------ |
| offset | 写入数据的 Flash 偏移地址 |
| buf | 存放待写入数据的缓冲区 |
| size | 待写入数据的大小 |
| return | 返回实际写入的数据大小 |
- `static int erase(long offset, rt_size_t size)` :擦除操作
| 参数 | 描述 |
| :----- | :------------------------ |
| offset | 擦除区域的 Flash 偏移地址 |
| size | 擦除区域的大小 |
| return | 返回实际擦除的区域大小 |
用户需要根据自己的 Flash 情况分别实现这些操作函数。在文件最底部定义了具体的 Flash 设备对象(stm32f2_onchip_flash)
`const struct fal_flash_dev stm32f2_onchip_flash = { "stm32_onchip", 0x08000000, 1024*1024, 128*1024, {init, read, write, erase} };`
- `"stm32_onchip"` : Flash 设备的名字
- 0x08000000: 对 Flash 操作的起始地址
- 1024*1024Flash 的总大小(1MB
- 128*1024Flash 块/扇区大小(因为 STM32F2 各块大小不均匀,所以擦除粒度为最大块的大小:128K)
- {init, read, write, erase} }Flash 的操作函数。 如果没有 init 初始化过程,第一个操作函数位置可以置空。
### 1.2 定义 Flash 设备表
Flash 设备表定义在 `fal_cfg.h` 头文件中,定义分区表前需 **新建 `fal_cfg.h` 文件**
参考 [示例文件 samples/porting/fal_cfg.h](samples/porting/fal_cfg.h) 或如下代码:
```c
/* ===================== Flash device Configuration ========================= */
extern const struct fal_flash_dev stm32f2_onchip_flash;
extern struct fal_flash_dev nor_flash0;
/* flash device table */
#define FAL_FLASH_DEV_TABLE \
{ \
&stm32f2_onchip_flash, \
&nor_flash0, \
}
```
Flash 设备表中,有两个 Flash 对象,一个为 STM32F2 的片内 Flash ,一个为片外的 Nor Flash。
## 2、Flash 分区
Flash 分区基于 Flash 设备,每个 Flash 设备又可以有 N 个分区,这些分区的集合就是分区表。在配置分区表前,务必保证已定义好 Flash 设备及设备表。
分区表也定义在 `fal_cfg.h` 头文件中。参考 [示例文件 samples/porting/fal_cfg.h](samples/porting/fal_cfg.h) 或如下代码:
```C
#define NOR_FLASH_DEV_NAME "norflash0"
/* ====================== Partition Configuration ========================== */
#ifdef FAL_PART_HAS_TABLE_CFG
/* partition table */
#define FAL_PART_TABLE \
{ \
{FAL_PART_MAGIC_WORD, "bl", "stm32_onchip", 0, 64*1024, 0}, \
{FAL_PART_MAGIC_WORD, "app", "stm32_onchip", 64*1024, 704*1024, 0}, \
{FAL_PART_MAGIC_WORD, "easyflash", NOR_FLASH_DEV_NAME, 0, 1024*1024, 0}, \
{FAL_PART_MAGIC_WORD, "download", NOR_FLASH_DEV_NAME, 1024*1024, 1024*1024, 0}, \
}
#endif /* FAL_PART_HAS_TABLE_CFG */
```
上面这个分区表详细描述信息如下:
| 分区名 | Flash 设备名 | 偏移地址 | 大小 | 说明 |
| :---------- | :------------- | :-------- | :---- | :----------------- |
| "bl" | "stm32_onchip" | 0 | 64KB | 引导程序 |
| "app" | "stm32_onchip" | 64*1024 | 704KB | 应用程序 |
| "easyflash" | "norflash0" | 0 | 1MB | EasyFlash 参数存储 |
| "download" | "norflash0" | 1024*1024 | 1MB | OTA 下载区 |
用户需要修改的分区参数包括:分区名称、关联的 Flash 设备名、偏移地址(相对 Flash 设备内部)、大小,需要注意以下几点:
- 分区名保证 **不能重复**
- 关联的 Flash 设备 **务必已经在 Flash 设备表中定义好** ,并且 **名称一致** ,否则会出现无法找到 Flash 设备的错误
- 分区的起始地址和大小 **不能超过 Flash 设备的地址范围** ,否则会导致包初始化错误
> 注意:每个分区定义时,除了填写上面介绍的参数属性外,需在前面增加 `FAL_PART_MAGIC_WORD` 属性,末尾增加 `0` (目前用于保留功能)
## 3、如何实现读写擦除等操作
我们以fal_norflash_port.c为例,简单介绍一下。
首先 介绍一下这两个宏定义
```C
#define FAL_ALIGN_UP( size, align ) \
( ( ( size ) + ( align ) - 1 ) - ( ( ( size ) + ( align ) - 1 ) % ( align ) ) )
#define FAL_ALIGN_DOWN( size, align ) ( ( ( size ) / ( align ) ) * ( align ) )
```
ALIGN_UP(16,4)=16 ALIGN_UP(15,4)=16 ALIGN_UP(17,4)=20
ALIGN_DOWN(16,4)=16 ALIGN_DOWN(15,4)=12 ALIGN_DOWN(17,4)=16
不难看出 ALIGN_UP是一个size向上取整到align的倍数,ALIGN_DOWN则是向下取整到align的倍数。
然后 介绍FLASH的特性
FLASH都是按块擦除 norflash的块大小一般为4K 单片机内部FLASH的块大小为1K,2K,16K不等
同时有最少写入数据的限制
norflash中 是按页写入 一次最少写256个字节数据 超过则覆盖起始数据 如第257个数据会覆盖第1个数据的位置
单片机内部flash中 一次最少写2个字节数据(STM32F105RC) 且只能将地址2字节对齐写入 只写一个字节时 给后面的字节补成FF
实现擦除
```C
static int32_t get_sector( uint32_t address );//获取当前属于第一个扇区
extern void norflash_erase_sector( uint32_t saddr );//负责擦除单个扇区的全部数据
//FLASH都是按块擦除 我们假定在调用擦除函数时 用户知道自己将会擦除扇区内的全部数据
static int erase( long offset, size_t size )
{
int32_t cur_erase_sector;
uint32_t addr = FLASH_START_ADDR + offset;
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
uint32_t addr_end = addr + size;
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
uint32_t cur_addr = addr_down;
while ( cur_addr < addr_end_up ) {
cur_erase_sector = get_sector( cur_addr );
if ( cur_erase_sector == -1 ) {//获取第几个扇区失败 说明地址超出范围
return cur_addr - addr;
}
norflash_erase_sector( cur_erase_sector );
cur_addr += FLASH_SECTOR_SIZE;//这里如果每个扇区的大小不同 需要实现从当前地址获取扇区实际大小的函数
}
return size;
}
```
实现读取
```c
//这个比较简单 直接调用norflash_read即可
static int read( long offset, uint8_t* buf, size_t size )
{
norflash_read( buf, offset + FLASH_START_ADDR, size );
return size;
}
```
最后 也是最关键的一步 实现写入
```c
/* 写入任意长数据到NOR Flash函数 */
static int write( long offset, const uint8_t* buf, size_t size )
{
// 计算实际物理地址(相对于Flash起始地址的偏移)
uint32_t addr = FLASH_START_ADDR + offset;
// 计算起始地址的扇区向上对齐地址(例如0x1007 -> 0x2000 当扇区大小4K
uint32_t addr_up = FAL_ALIGN_UP( addr, FLASH_SECTOR_SIZE );
// 计算起始地址的扇区向下对齐地址(例如0x1007 -> 0x1000
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
// 计算写入结束地址
uint32_t addr_end = addr + size;
// 结束地址的扇区向上对齐地址
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
// 结束地址的扇区向下对齐地址
uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FLASH_SECTOR_SIZE );
uint32_t cur_addr = addr_down; // 当前处理的扇区起始地址
uint32_t max_write_len = 0; // 单次最大可写入长度
uint32_t write_len = 0; // 实际写入长度
// 地址有效性检查:结束地址超过Flash范围 或 起始地址在Flash区域外
if ( addr_end_up > FLASH_END_ADDR || ( int )addr_end_down < FLASH_START_ADDR ) return -1;
// 分配扇区大小的缓冲区(用于处理部分写入时需要保存原始数据的情况)
uint8_t* read_sector_buf = FAL_MALLOC( FLASH_SECTOR_SIZE );
if ( read_sector_buf == RT_NULL ) {
return -2; // 内存分配失败
}
// 按扇区逐个处理(从起始扇区到结束扇区)
while ( cur_addr < addr_end_up ) {
/* 情况1:处理起始地址不在扇区边界的情况(首扇区部分写入) */
if ( cur_addr < addr ) {
// 读取整个扇区原始数据到缓冲区
read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
// 计算首扇区可写入的最大长度(从起始地址到扇区末尾)
max_write_len = ( addr_up - addr );
// 确定实际写入长度(不超过剩余数据大小)
write_len = size >= max_write_len ? max_write_len : size;
// 判断是否需要擦除(检查目标区域是否包含需要从0->1的位)
if ( judge_whether_erase( read_sector_buf + addr - cur_addr, write_len ) ){
// 需要擦除时:执行擦除->修改缓冲区->写入整个扇区
norflash_erase_sector( get_sector( cur_addr ) );
// 将新数据合并到缓冲区对应位置
FAL_MEMCPY( read_sector_buf + ( addr - cur_addr ), buf, write_len );
// 写入整个扇区
write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
}
else {
// 无需擦除时直接写入数据(NOR Flash允许直接写入0位)
write_sector( addr, buf, write_len );
}
buf += write_len; // 移动数据指针
}
/* 情况2:处理结束地址不在扇区边界的情况(末扇区部分写入) */
else if ( cur_addr == addr_end_down ) {
// 读取整个扇区原始数据
read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
// 计算最大可写入长度(整个扇区)
max_write_len = FLASH_SECTOR_SIZE;
// 计算实际需要写入的长度(从扇区起始到结束地址)
write_len = addr_end - cur_addr;
write_len = write_len >= max_write_len ? max_write_len : write_len;
// 判断是否需要擦除
if ( judge_whether_erase( read_sector_buf, write_len ) ) {
// 需要擦除时:合并数据->擦除->写入整个扇区
FAL_MEMCPY( read_sector_buf, buf, write_len );
norflash_erase_sector( get_sector( cur_addr ) );
write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
}
else {
// 直接写入数据
write_sector( cur_addr, buf, write_len );
}
}
/* 情况3:完整扇区写入(中间扇区) */
else {
// 直接擦除整个扇区(完整覆盖不需要保留数据)
norflash_erase_sector( get_sector( cur_addr ) );
// 写入整个扇区数据
write_sector( cur_addr, buf, FLASH_SECTOR_SIZE );
buf += FLASH_SECTOR_SIZE; // 移动数据指针
}
cur_addr += FLASH_SECTOR_SIZE; // 移动到下一个扇区
}
FAL_FREE( read_sector_buf ); // 释放缓冲区内存
return size; // 返回成功写入的字节数
}
```
关键逻辑说明:
地址对齐处理:通过向上/向下对齐计算确定实际需要操作的扇区范围
三种写入场景:
首扇区部分写入:需要读取原始数据,合并新数据后判断擦除必要性
中间完整扇区:直接擦除后全量写入,提高效率
末扇区部分写入:处理方式类似首扇区,但数据位置不同
擦除判断:通过judge_whether_erase函数检测是否需要执行擦除操作(基于NOR Flash的特性,只有需要将0变为1时才必须擦除)
数据合并:使用临时缓冲区保存原始数据,仅修改需要写入的部分,最大限度减少擦除操作
内存管理:动态分配扇区大小的缓冲区,处理完成后立即释放
到这里 工作似乎做完了 但是 我们没有写入扇区的函数 只有页写入函数 norflash_write_page
扇区写入逻辑和任意写入逻辑基本相同
下面实现扇区写入函数
```c
/* 扇区写入函数:处理按页对齐的NOR Flash写入操作 */
static int write_sector( long offset, const uint8_t* buf, size_t size )
{
// 计算实际物理地址(FLASH起始地址 + 偏移量)
uint32_t addr = FLASH_START_ADDR + offset;
// 计算地址的页对齐上边界和下边界(按FLASH_PAGE_SIZE对齐)
uint32_t addr_up = FAL_ALIGN_UP( addr, FLASH_PAGE_SIZE );
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_PAGE_SIZE );
// 计算写入结束地址及其页对齐边界
uint32_t addr_end = addr + size;
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_PAGE_SIZE );
uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FLASH_PAGE_SIZE );
// 初始化当前处理地址和长度变量
uint32_t cur_addr = addr_down; // 从页对齐起始地址开始处理
uint32_t max_write_len = 0; // 单次最大可写入长度
uint32_t write_len = 0; // 实际写入长度
// 循环处理所有需要写入的页
while ( cur_addr < addr_end_up ) {
// 处理起始未对齐部分(跨页起始边界)
if ( cur_addr < addr ) {
// 计算当前页剩余可写空间(页结束地址 - 实际起始地址)
max_write_len = ( addr_up - addr );
// 取实际剩余长度和总长度的最小值
write_len = size >= max_write_len ? max_write_len : size;
// 执行页写入:参数依次是数据指针、物理地址、写入长度
norflash_write_page( buf, addr, write_len );
buf += write_len; // 移动数据指针
}
// 处理结束未对齐部分(跨页结束边界)
else if ( cur_addr == addr_end_down ) {
// 单页最大写入长度
max_write_len = FLASH_PAGE_SIZE;
// 计算实际需要写入的长度(结束地址 - 当前页起始地址)
write_len = addr_end - cur_addr;
// 确保不超过页最大长度
write_len = write_len >= max_write_len ? max_write_len : write_len;
// 执行页写入
norflash_write_page( buf, cur_addr, write_len );
}
// 处理完整页写入
else {
// 整页写入(FLASH_PAGE_SIZE长度)
norflash_write_page( buf, cur_addr, FLASH_PAGE_SIZE );
buf += FLASH_PAGE_SIZE; // 移动数据指针整页长度
}
// 移动到下一页起始地址
cur_addr += FLASH_PAGE_SIZE;
}
return size; // 返回成功写入的总字节数
}
```
至此 我们就完成了Flash驱动的移植 实现了读写擦除等操作 上面的思路对于大部分flash驱动来说是通用的
@@ -0,0 +1,41 @@
/*
* Copyright (c) 2006-2018, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-05-17 armink the first version
*/
#ifndef _FAL_CFG_H_
#define _FAL_CFG_H_
#include <rtconfig.h>
#include <board.h>
#define NOR_FLASH_DEV_NAME "norflash0"
/* ===================== Flash device Configuration ========================= */
extern const struct fal_flash_dev stm32f2_onchip_flash;
extern struct fal_flash_dev nor_flash0;
/* flash device table */
#define FAL_FLASH_DEV_TABLE \
{ \
&stm32f2_onchip_flash, \
&nor_flash0, \
}
/* ====================== Partition Configuration ========================== */
#ifdef FAL_PART_HAS_TABLE_CFG
/* partition table */
#define FAL_PART_TABLE \
{ \
{FAL_PART_MAGIC_WORD, "bl", "stm32_onchip", 0, 64*1024, 0}, \
{FAL_PART_MAGIC_WORD, "app", "stm32_onchip", 64*1024, 704*1024, 0}, \
{FAL_PART_MAGIC_WORD, "easyflash", NOR_FLASH_DEV_NAME, 0, 1024*1024, 0}, \
{FAL_PART_MAGIC_WORD, "download", NOR_FLASH_DEV_NAME, 1024*1024, 1024*1024, 0}, \
}
#endif /* FAL_PART_HAS_TABLE_CFG */
#endif /* _FAL_CFG_H_ */
@@ -0,0 +1,96 @@
/*
* Copyright (c) 2006-2018, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-01-26 armink the first version
*/
#include <fal.h>
#include <sfud.h>
#ifdef FAL_USING_SFUD_PORT
#ifdef RT_USING_SFUD
#include <dev_spi_flash_sfud.h>
#endif
#ifndef FAL_USING_NOR_FLASH_DEV_NAME
#define FAL_USING_NOR_FLASH_DEV_NAME "norflash0"
#endif
static int init(void);
static int read(long offset, rt_uint8_t *buf, rt_size_t size);
static int write(long offset, const rt_uint8_t *buf, rt_size_t size);
static int erase(long offset, rt_size_t size);
static sfud_flash_t sfud_dev = NULL;
struct fal_flash_dev nor_flash0 =
{
.name = FAL_USING_NOR_FLASH_DEV_NAME,
.addr = 0,
.len = 8 * 1024 * 1024,
.blk_size = 4096,
.ops = {init, read, write, erase},
.write_gran = 1
};
static int init(void)
{
#ifdef RT_USING_SFUD
/* RT-Thread RTOS platform */
sfud_dev = rt_sfud_flash_find_by_dev_name(FAL_USING_NOR_FLASH_DEV_NAME);
#else
/* bare metal platform */
extern sfud_flash sfud_norflash0;
sfud_dev = &sfud_norflash0;
#endif
if (NULL == sfud_dev)
{
return -1;
}
/* update the flash chip information */
nor_flash0.blk_size = sfud_dev->chip.erase_gran;
nor_flash0.len = sfud_dev->chip.capacity;
return 0;
}
static int read(long offset, rt_uint8_t *buf, rt_size_t size)
{
RT_ASSERT(sfud_dev);
RT_ASSERT(sfud_dev->init_ok);
sfud_read(sfud_dev, nor_flash0.addr + offset, size, buf);
return size;
}
static int write(long offset, const rt_uint8_t *buf, rt_size_t size)
{
RT_ASSERT(sfud_dev);
RT_ASSERT(sfud_dev->init_ok);
if (sfud_write(sfud_dev, nor_flash0.addr + offset, size, buf) != SFUD_SUCCESS)
{
return -1;
}
return size;
}
static int erase(long offset, rt_size_t size)
{
RT_ASSERT(sfud_dev);
RT_ASSERT(sfud_dev->init_ok);
if (sfud_erase(sfud_dev, nor_flash0.addr + offset, size) != SFUD_SUCCESS)
{
return -1;
}
return size;
}
#endif /* FAL_USING_SFUD_PORT */
@@ -0,0 +1,198 @@
/*
* Copyright (c) 2006-2018, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-01-26 armink the first version
*/
#include <fal.h>
#include <stm32f2xx.h>
/* base address of the flash sectors */
#define ADDR_FLASH_SECTOR_0 ((rt_uint32_t)0x08000000) /* Base address of Sector 0, 16 K bytes */
#define ADDR_FLASH_SECTOR_1 ((rt_uint32_t)0x08004000) /* Base address of Sector 1, 16 K bytes */
#define ADDR_FLASH_SECTOR_2 ((rt_uint32_t)0x08008000) /* Base address of Sector 2, 16 K bytes */
#define ADDR_FLASH_SECTOR_3 ((rt_uint32_t)0x0800C000) /* Base address of Sector 3, 16 K bytes */
#define ADDR_FLASH_SECTOR_4 ((rt_uint32_t)0x08010000) /* Base address of Sector 4, 64 K bytes */
#define ADDR_FLASH_SECTOR_5 ((rt_uint32_t)0x08020000) /* Base address of Sector 5, 128 K bytes */
#define ADDR_FLASH_SECTOR_6 ((rt_uint32_t)0x08040000) /* Base address of Sector 6, 128 K bytes */
#define ADDR_FLASH_SECTOR_7 ((rt_uint32_t)0x08060000) /* Base address of Sector 7, 128 K bytes */
#define ADDR_FLASH_SECTOR_8 ((rt_uint32_t)0x08080000) /* Base address of Sector 8, 128 K bytes */
#define ADDR_FLASH_SECTOR_9 ((rt_uint32_t)0x080A0000) /* Base address of Sector 9, 128 K bytes */
#define ADDR_FLASH_SECTOR_10 ((rt_uint32_t)0x080C0000) /* Base address of Sector 10, 128 K bytes */
#define ADDR_FLASH_SECTOR_11 ((rt_uint32_t)0x080E0000) /* Base address of Sector 11, 128 K bytes */
/**
* Get the sector of a given address
*
* @param address flash address
*
* @return The sector of a given address
*/
static rt_uint32_t stm32_get_sector(rt_uint32_t address)
{
rt_uint32_t sector = 0;
if ((address < ADDR_FLASH_SECTOR_1) && (address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_Sector_0;
}
else if ((address < ADDR_FLASH_SECTOR_2) && (address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_Sector_1;
}
else if ((address < ADDR_FLASH_SECTOR_3) && (address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_Sector_2;
}
else if ((address < ADDR_FLASH_SECTOR_4) && (address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_Sector_3;
}
else if ((address < ADDR_FLASH_SECTOR_5) && (address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_Sector_4;
}
else if ((address < ADDR_FLASH_SECTOR_6) && (address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_Sector_5;
}
else if ((address < ADDR_FLASH_SECTOR_7) && (address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_Sector_6;
}
else if ((address < ADDR_FLASH_SECTOR_8) && (address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_Sector_7;
}
else if ((address < ADDR_FLASH_SECTOR_9) && (address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_Sector_8;
}
else if ((address < ADDR_FLASH_SECTOR_10) && (address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_Sector_9;
}
else if ((address < ADDR_FLASH_SECTOR_11) && (address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_Sector_10;
}
else
{
sector = FLASH_Sector_11;
}
return sector;
}
/**
* Get the sector size
*
* @param sector sector
*
* @return sector size
*/
static rt_uint32_t stm32_get_sector_size(rt_uint32_t sector) {
RT_ASSERT(IS_FLASH_SECTOR(sector));
switch (sector) {
case FLASH_Sector_0: return 16 * 1024;
case FLASH_Sector_1: return 16 * 1024;
case FLASH_Sector_2: return 16 * 1024;
case FLASH_Sector_3: return 16 * 1024;
case FLASH_Sector_4: return 64 * 1024;
case FLASH_Sector_5: return 128 * 1024;
case FLASH_Sector_6: return 128 * 1024;
case FLASH_Sector_7: return 128 * 1024;
case FLASH_Sector_8: return 128 * 1024;
case FLASH_Sector_9: return 128 * 1024;
case FLASH_Sector_10: return 128 * 1024;
case FLASH_Sector_11: return 128 * 1024;
default : return 128 * 1024;
}
}
static int init(void)
{
/* do nothing now */
}
static int read(long offset, rt_uint8_t *buf, rt_size_t size)
{
rt_size_t i;
rt_uint32_t addr = stm32f2_onchip_flash.addr + offset;
for (i = 0; i < size; i++, addr++, buf++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
static int write(long offset, const rt_uint8_t *buf, rt_size_t size)
{
rt_size_t i;
rt_uint32_t read_data;
rt_uint32_t addr = stm32f2_onchip_flash.addr + offset;
FLASH_Unlock();
FLASH_ClearFlag(
FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR
| FLASH_FLAG_PGSERR);
for (i = 0; i < size; i++, buf++, addr++)
{
/* write data */
FLASH_ProgramByte(addr, *buf);
read_data = *(rt_uint8_t *) addr;
/* check data */
if (read_data != *buf)
{
return -1;
}
}
FLASH_Lock();
return size;
}
static int erase(long offset, rt_size_t size)
{
FLASH_Status flash_status;
rt_size_t erased_size = 0;
rt_uint32_t cur_erase_sector;
rt_uint32_t addr = stm32f2_onchip_flash.addr + offset;
/* start erase */
FLASH_Unlock();
FLASH_ClearFlag(
FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR
| FLASH_FLAG_PGSERR);
/* it will stop when erased size is greater than setting size */
while (erased_size < size)
{
cur_erase_sector = stm32_get_sector(addr + erased_size);
flash_status = FLASH_EraseSector(cur_erase_sector, VoltageRange_3);
if (flash_status != FLASH_COMPLETE)
{
return -1;
}
erased_size += stm32_get_sector_size(cur_erase_sector);
}
FLASH_Lock();
return size;
}
const struct fal_flash_dev stm32f2_onchip_flash =
{
.name = "stm32_onchip",
.addr = 0x08000000,
.len = 1024*1024,
.blk_size = 128*1024,
.ops = {init, read, write, erase},
.write_gran = 8
};
@@ -0,0 +1,196 @@
#include <fal.h>
#include "fal_def.h"
#define FLASH_SECTOR_SIZE ( 4 * 1024 )
#define FLASH_START_ADDR 0U
#define FLASH_END_ADDR 0x01000000U // 16*1024*1024
#define FLASH_PROGRAM_MIN_SIZE 256 // 256 bytes
//每次对falsh写入时 底层可以写入的最大字节数为 FLASH_PAGE_SIZE
#define FLASH_PAGE_SIZE FLASH_PROGRAM_MIN_SIZE // 256 bytes
/**
* @brief 需要实现以下函数
*/
extern int norflash_init( void );
extern void norflash_read( uint8_t* pbuf, uint32_t addr, uint16_t datalen );
extern void norflash_write_page( uint8_t* pbuf, uint32_t addr, uint16_t datalen );
extern void norflash_erase_sector( uint32_t saddr );
static int init( void );
static int read( long offset, uint8_t* buf, size_t size );
static int write( long offset, const uint8_t* buf, size_t size );
static int erase( long offset, size_t size );
#define FAL_ALIGN_UP( size, align ) \
( ( ( size ) + ( align ) - 1 ) - ( ( ( size ) + ( align ) - 1 ) % ( align ) ) )
#define FAL_ALIGN_DOWN( size, align ) ( ( ( size ) / ( align ) ) * ( align ) )
static int32_t get_sector( uint32_t address )
{
uint32_t sector = 0;
if ( address < FLASH_END_ADDR && address >= FLASH_START_ADDR ) {
address -= FLASH_START_ADDR;
sector = address / FLASH_SECTOR_SIZE;
return sector;
}
return -1;
}
static int init( void )
{
norflash_init();
return 0;
}
static int read( long offset, uint8_t* buf, size_t size )
{
norflash_read( buf, offset + FLASH_START_ADDR, size );
return size;
}
static uint32_t judge_whether_erase( uint8_t* sector_buf, uint16_t len )
{
uint8_t* p = sector_buf;
for ( size_t i = 0; i < len; i++ ) {
if ( p[ i ] != 0xFF ) {
return 1;
}
}
return 0;
}
/**
* @brief
*
* @param offset 绝对地址
* @param buf 读出来的扇区数据缓存
* @param size 从扇区开始要写的长度 小于扇区大小
* @return int
*/
static int write_sector( long offset, const uint8_t* buf, size_t size )
{
uint32_t addr = FLASH_START_ADDR + offset;
uint32_t addr_up = FAL_ALIGN_UP( addr, FLASH_PAGE_SIZE );
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_PAGE_SIZE );
uint32_t addr_end = addr + size;
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_PAGE_SIZE );
uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FLASH_PAGE_SIZE );
uint32_t cur_addr = addr_down;
uint32_t max_write_len = 0;
uint32_t write_len = 0;
while ( cur_addr < addr_end_up ) {
if ( cur_addr < addr ) {
max_write_len = ( addr_up - addr );
write_len = size >= max_write_len ? max_write_len : size;
norflash_write_page( buf, addr, write_len );
buf += write_len;
}
else if ( cur_addr == addr_end_down ) {
max_write_len = FLASH_PAGE_SIZE;
write_len = addr_end - cur_addr;
write_len = write_len >= max_write_len ? max_write_len : write_len;
norflash_write_page( buf, cur_addr, write_len );
}
else {
norflash_write_page( buf, cur_addr, FLASH_PAGE_SIZE );
buf += FLASH_PAGE_SIZE;
}
cur_addr += FLASH_PAGE_SIZE;
}
return size;
}
static int write( long offset, const uint8_t* buf, size_t size )
{
uint32_t addr = FLASH_START_ADDR + offset;
uint32_t addr_up = FAL_ALIGN_UP( addr, FLASH_SECTOR_SIZE );
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
uint32_t addr_end = addr + size;
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FLASH_SECTOR_SIZE );
uint32_t cur_addr = addr_down;
uint32_t max_write_len = 0;
uint32_t write_len = 0;
if ( addr_end_up > FLASH_END_ADDR || ( int )addr_end_down < FLASH_START_ADDR ) return -1;
//如果不使用内存分配可以定义一个static FLASH_SECTOR_SIZE 长度的buf
uint8_t* read_sector_buf = FAL_MALLOC( FLASH_SECTOR_SIZE );
if ( read_sector_buf == RT_NULL ) {
return -2;
}
while ( cur_addr < addr_end_up ) {
// 首次扇区写
if ( cur_addr < addr ) {
read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
max_write_len = ( addr_up - addr );
write_len = size >= max_write_len ? max_write_len : size;
if ( judge_whether_erase( read_sector_buf + addr - cur_addr, write_len ) ){
norflash_erase_sector( get_sector( cur_addr ) );
FAL_MEMCPY( read_sector_buf + ( addr - cur_addr ), buf, write_len );
write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
}
else {
write_sector( addr, buf, write_len );
}
buf += write_len;
}
//最后一次扇区写
else if ( cur_addr == addr_end_down ) {
read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
max_write_len = FLASH_SECTOR_SIZE;
write_len = addr_end - cur_addr;
write_len = write_len >= max_write_len ? max_write_len : write_len;
if ( judge_whether_erase( read_sector_buf, write_len ) ) {
FAL_MEMCPY( read_sector_buf, buf, write_len );
norflash_erase_sector( get_sector( cur_addr ) );
write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
}
else {
write_sector( cur_addr, buf, write_len );
}
}
//中间扇区写 直接擦除
else {
norflash_erase_sector( get_sector( cur_addr ) );
write_sector( cur_addr, buf, FLASH_SECTOR_SIZE );
buf += FLASH_SECTOR_SIZE;
}
cur_addr += FLASH_SECTOR_SIZE;
}
FAL_FREE( read_sector_buf );
return size;
}
static int erase( long offset, size_t size )
{
int32_t cur_erase_sector;
uint32_t addr = FLASH_START_ADDR + offset;
uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
uint32_t addr_end = addr + size;
uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
uint32_t cur_addr = addr_down;
while ( cur_addr < addr_end_up ) {
cur_erase_sector = get_sector( cur_addr );
if ( cur_erase_sector == -1 ) {
return cur_addr - addr;
}
norflash_erase_sector( cur_erase_sector );
cur_addr += FLASH_SECTOR_SIZE;
}
return size;
}
const struct fal_flash_dev norflash0 = {
.name = "norflash0",
.addr = FLASH_START_ADDR,
.len = FLASH_END_ADDR - FLASH_START_ADDR,
.blk_size = FLASH_SECTOR_SIZE,
.ops = { init, read, write, erase },
.write_gran = 1,
};