add fal wdt tmr

This commit is contained in:
wmano
2025-08-27 23:16:25 +08:00
parent f9e7fa9956
commit fa4d12b6e0
20 changed files with 1059 additions and 804 deletions
@@ -1,275 +0,0 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2020-03-05 redoc support stm32f103vg
*
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t addr)
{
uint32_t page = 0;
page = RT_ALIGN_DOWN(addr, FLASH_PAGE_SIZE);
return page;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if (addr % 4 != 0)
{
LOG_E("write addr must be 4-byte alignment");
return -RT_EINVAL;
}
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
while (addr < end_addr)
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, addr, *((rt_uint32_t *)buf)) == HAL_OK)
{
if (*(rt_uint32_t *)addr != *(rt_uint32_t *)buf)
{
result = -RT_ERROR;
break;
}
addr += 4;
buf += 4;
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash with bank.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param bank flash bank
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase_bank(uint32_t bank, rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.PageAddress = GetPage(addr);
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
EraseInitStruct.Banks = bank;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
/**
* Erase data on flash .
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
#if defined(FLASH_BANK2_END)
rt_err_t result = RT_EOK;
rt_uint32_t addr_bank1 = 0;
rt_uint32_t size_bank1 = 0;
rt_uint32_t addr_bank2 = 0;
rt_uint32_t size_bank2 = 0;
if((addr + size) <= FLASH_BANK1_END)
{
addr_bank1 = addr;
size_bank1 = size;
size_bank2 = 0;
}
else if(addr > FLASH_BANK1_END)
{
size_bank1 = 0;
addr_bank2 = addr;
size_bank2 = size;
}
else
{
addr_bank1 = addr;
size_bank1 = FLASH_BANK1_END + 1 - addr_bank1;
addr_bank2 = FLASH_BANK1_END + 1;
size_bank2 = addr + size - (FLASH_BANK1_END + 1);
}
if(size_bank1)
{
LOG_D("bank1: addr (0x%p), size %d", (void *)addr_bank1, size_bank1);
if(size_bank1 != stm32_flash_erase_bank(FLASH_BANK_1, addr_bank1, size_bank1))
{
result = -RT_ERROR;
goto __exit;
}
}
if(size_bank2)
{
LOG_D("bank2: addr (0x%p), size %d", (void *)addr_bank2, size_bank2);
if(size_bank2 != stm32_flash_erase_bank(FLASH_BANK_2, addr_bank2, size_bank2))
{
result = -RT_ERROR;
goto __exit;
}
}
__exit:
if(result != RT_EOK)
{
return result;
}
return size_bank1 + size_bank2;
#else
return stm32_flash_erase_bank(FLASH_BANK_1, addr, size);
#endif
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */
@@ -388,7 +388,6 @@ const struct fal_flash_dev stm32_onchip_flash_16k =
fal_flash_erase_16k,
},
8,
{},
};
const struct fal_flash_dev stm32_onchip_flash_64k =
{
@@ -403,7 +402,6 @@ const struct fal_flash_dev stm32_onchip_flash_64k =
fal_flash_erase_64k,
},
8,
{},
};
const struct fal_flash_dev stm32_onchip_flash_128k =
{
@@ -418,7 +416,6 @@ const struct fal_flash_dev stm32_onchip_flash_128k =
fal_flash_erase_128k,
},
8,
{},
};
static int fal_flash_read_16k(long offset, rt_uint8_t *buf, size_t size)
@@ -1,263 +0,0 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2019-3-2 jinsheng add Macro judgment
* 2020-1-6 duminmin support single bank mode
* 2020-5-17 yufanyufan77 support support H7
* 2021-3-3 zhuyf233 fix some bugs
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @retval The length of bytes that have been read
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_ERROR;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return The length of bytes that have been written
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size - 1, write_addr;
rt_uint32_t write_granularity = FLASH_NB_32BITWORD_IN_FLASHWORD * 4;
rt_uint32_t write_size = write_granularity;
rt_uint8_t write_buffer[32] = {0};
if ((end_addr) > FLASH_END)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
if(addr % 32 != 0)
{
LOG_E("write addr must be 32-byte alignment");
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
write_addr = (uint32_t)buf;
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR);
while (addr < end_addr)
{
if(end_addr - addr + 1 < write_granularity)
{
write_size = end_addr - addr + 1;
for(size_t i = 0; i < write_size; i++)
{
write_buffer[i] = *((uint8_t *)(write_addr + i));
}
write_addr = (uint32_t)((rt_uint32_t *)write_buffer);
}
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, write_addr) == HAL_OK)
{
for(rt_uint8_t i = 0; i < write_size; i++)
{
if (*(rt_uint8_t *)(addr + i) != *(rt_uint8_t *)(write_addr + i))
{
result = -RT_ERROR;
goto __exit;
}
}
addr += write_granularity;
write_addr += write_granularity;
}
else
{
result = -RT_ERROR;
goto __exit;
}
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t SECTORError = 0;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
rt_uint32_t addr_bank1 = 0;
rt_uint32_t size_bank1 = 0;
#ifdef FLASH_BANK_2
rt_uint32_t addr_bank2 = 0;
rt_uint32_t size_bank2 = 0;
#endif
if((addr + size) < FLASH_BANK2_BASE)
{
addr_bank1 = addr;
size_bank1 = size;
#ifdef FLASH_BANK_2
size_bank2 = 0;
#endif
}
else if(addr >= FLASH_BANK2_BASE)
{
size_bank1 = 0;
#ifdef FLASH_BANK_2
addr_bank2 = addr;
size_bank2 = size;
#endif
}
else
{
addr_bank1 = addr;
size_bank1 = FLASH_BANK2_BASE - addr_bank1;
#ifdef FLASH_BANK_2
addr_bank2 = FLASH_BANK2_BASE;
size_bank2 = addr + size - FLASH_BANK2_BASE;
#endif
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
SCB_DisableDCache();
if(size_bank1)
{
EraseInitStruct.Sector = (addr_bank1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank1 + size_bank1 -1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_1;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#ifdef FLASH_BANK_2
if(size_bank2)
{
EraseInitStruct.Sector = (addr_bank2 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank2 + size_bank2 -1 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_2;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#endif
__exit:
SCB_EnableDCache();
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */